c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 www. ruichips .com ru 2 0 p 4c p - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit co mmon ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage - 2 0 v gss gate - source voltage 12 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t a =25 c - 1 .5 a mounte d on large heat sink i d p 300 s pulse drain current tested t a =25 c - 16 a t a =25 c - 4 i d continuous drain current t a = 7 0 c - 3.2 a t a =25 c 1.3 p d maximum power dissipation t a = 7 0 c 0.8 w r q j a thermal resistance - junction to ambient 100 c /w ? - 2 0 v/ - 4 a, r ds ( on ) = 40 m w (typ. ) @ v gs = - 4.5 v r ds ( on ) = 55 m w (typ. ) @ v gs = - 2 .5 v ? low r ds (on) ? super high dense cell design ? reliable and rugged ? lead free and green available ? power management ? load switch abso lute maximum ratings sot - 23 - 3 p - channel mosfe t
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 2 www. ruichips .com ru 2 0 p 4c electrical characteristics ( t a =25 c unless otherwise noted) r u2 0 p 4c symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds = - 250 m a - 2 0 v v ds = - 2 0 v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c - 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds = - 250 m a - 0.4 - 0.7 - 1 . 1 v i gss gate leakage current v gs = 1 0 v, v ds =0v 1 0 0 n a v gs = - 4.5 v, i ds = - 4 a 40 60 m w r ds ( on ) drain - source on - state resistance v gs = - 2 .5 v, i ds = - 3 a 55 100 m w notes : pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . the value in any given application depends on the user's specific board design. pul se test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = - 1 a, v gs =0v - 1 v t rr reverse recovery time 1 5 ns q rr reverse recovery charge i sd = - 4 a, dl sd /dt=100a/ m s 8 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 7 . 5 w c iss input capacitance 5 8 5 c oss output capacitance 9 5 c rss reverse transfer capacitance v gs =0v, v ds = - 1 0 v, frequency=1.0mhz 5 0 pf t d ( on ) turn - o n delay time 8 t r turn - on rise time 1 1 t d ( off ) turn - off delay time 30 t f turn - off fall time v dd = - 1 0 v, r l = 2. 5 w , i ds = - 4 a, v gen = - 4.5 v, r g = 6 w 1 0 ns gate charge characteristics q g total gate charge 9 1 3 q gs gate - source charge 1.8 q gd gate - drain charge v ds = - 16 v, v gs = - 4.5 v, i ds = - 4 a 2.9 nc
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 3 www. ruichips .com ru 2 0 p 4c typical characteristics power dissipation drain current p tot - power ( w) - i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance - i d - drain current (a) normalized effective transient - v ds - drain - source voltage (v ) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 4 www. ruichips .com ru 2 0 p 4c typical characteristics output characteristics drain - source on resistance - i d - drain current (a) r ds(on) - on resistance ( m ) - v ds - drain - source voltage (v) - i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage - v g s - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 5 www. ruichips .com ru 2 0 p 4c typical characteristics drain - source on resistance source - drain diode forward normalized on resistance - i s - source current (a) t j - junction tem perature (c) - v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) - v gs - gate - source voltage (v) - v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 6 www. ruichips .com ru 2 0 p 4c avalanche test circ uit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 7 www. ruichips .com ru 2 0 p 4c ordering and marking information ru 2 0 p 4 package (available) c : sot - 23 - 3 o perating temperature range c : - 55 to 1 50 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 8 www. ruichips .com ru 2 0 p 4c package information sot - 23 - 3 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 1.050 1.250 0.041 0.049 e 1.500 1.700 0.059 0.067 a1 0.0000 0.100 0.000 0.004 e 1 2.650 2.950 0.104 0.116 a2 1.050 1.150 0.041 0.045 e 0.950(bsc) 0.037(bsc) b 0.300 0.500 0.012 0.020 e1 1.800 2.000 0.071 0.079 c 0.100 0.200 0.004 0.008 l 0.300 0.600 0.012 0.024 d 2.820 3.020 0.111 0.119 0 8 0 8
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2011 9 www. ruichips .com ru 2 0 p 4c customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : inv estor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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